| 摘要 |
PURPOSE: An MIM capacitor and a manufacturing method thereof are provided to increase and control the electrostatic capacity of MIM(Metal-Insulator-Metal) by forming a nitride layer on after patterning aluminum in uneven formation. CONSTITUTION: A lower insulating layer(110) is formed on a semiconductor substrate(100). The lower insulating layer is selectively patterned and a lower contact hole(120) is formed. A lower aluminium layer(131), a nitride film(132), and a metal layer(133) are successively formed on the lower contact hole. The lower aluminium layer is formed into a plurality of uneven formations. The upper contact hole(220) is formed by selectively patterning the upper insulating layer. The upper aluminum layer(231) is formed on the upper contact hole.
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