| 摘要 |
<p>A rinse solution for removing thick film resist includes dimethylsulfoxide, potassium hydroxide, alcohol amine, alkyl diol aryl ether and corrosion inhibitor of polyacrylic acid series. The alkyl glycol of alkyl glycol aryl ether has 3-18 carbon atoms. The rinse solution for removing thick resist may clean thick resist on a metal, metal alloy or dielectric substrate, especially clean more 100µm thickness resist. Meanwhile the rinse solution has low etch rate for metals such as Al and Cu, and nonmetals such as SiO2 with very low damage to the wafer pattern and the substrate. The rinse solution may be used in a large scope of temperature.</p> |
