| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a micro electromechanical device capable of heightening performance of both a micro electromechanical element and an integrated circuit. <P>SOLUTION: In a gyro sensor device wherein a gyro sensor which is a micro electromechanical element and an integrated circuit 3 are formed on one element formation substrate 1, the element formation substrate 1 is a multilayer substrate having a silicon substrate (first semiconductor substrate) 1A and a silicon substrate (second semiconductor substrate) 1B provided on one surface side in the thickness direction of the silicon substrate 1A, and having a larger resistivity than the silicon substrate 1A, the gyro sensor is formed over the silicon substrate 1A and the silicon substrate 1B, and the integrated circuit 3 is formed on the silicon substrate 1B. A support substrate 2 fixed on the other surface side of the silicon substrate 1A is provided, and a moving part of the gyro sensor is positioned in a sealed space enclosed by a peripheral part of the silicon substrate B and the silicon substrate 1A and by the support substrate 2. <P>COPYRIGHT: (C)2010,JPO&INPIT |
