| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin-film MIM capacitor that can obtain sufficient effect of preventing deterioration of insulating characteristics and leak current characteristics, and to provide a method of manufacturing the thin-film MIM capacitor. <P>SOLUTION: The thin-film MIM capacitor 1 has a lower electrode 3, a base metal thin film 4, a dielectric thin film 5, and an upper electrode 6 laminated in order on a substrate 2. The base metal thin film 4, dielectric thin film 5, and upper electrode 6 are formed to have substantially the same area respectively, and the lower electrode 3 has a shape different from those of other thin films so as to form a connection part with the outside. Side surfaces of the base metal thin film 4, dielectric thin film 5, and upper electrode 6 are covered with base metal oxide 7 containing the same metal atom with the base metal thin film 4. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
