发明名称 METHOD OF MANUFACTURING SUBSTRATE WITH BUILT-IN SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate with a built-in semiconductor device for suppressing the raise of a manufacturing cost, and achieving microfabrication. <P>SOLUTION: The method is required to include: a first step of preparing a semiconductor device having a semiconductor integrated circuit 10, a connection terminal 12, and the first insulating layer 13; a second step of arranging the semiconductor device 10 on the surface of a support; a third step of forming the second insulating layer 41, so as to embed at least the side surfaces of the semiconductor device 10; a fourth step of removing the support; a fifth step of forming the third insulating layer 42 on the opposite surface; a sixth step of preparing a wiring board with the first wiring pattern, and performing fixing onto surfaces on the opposite side of an exposure part in the semiconductor device 10 and the second insulating layer 41; a seventh step of forming a via-hole 41X to expose the first wiring pattern; and an eighth step of forming the second wiring pattern for electrically connecting the exposure part to the first wiring pattern via the via-hole. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010109180(A) 申请公布日期 2010.05.13
申请号 JP20080280169 申请日期 2008.10.30
申请人 SHINKO ELECTRIC IND CO LTD 发明人 KOBAYASHI TOSHIO;ARAI SUNAO;YAMANO KOJI
分类号 H05K3/46;H01L23/12 主分类号 H05K3/46
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