| 摘要 |
<P>PROBLEM TO BE SOLVED: To enhance performance of a semiconductor device having a field-effect transistor. <P>SOLUTION: The semiconductor device having an MIS transistor Q1 formed on an n-type silicon substrate 1 has an n-type drift region n1 formed on a principal surface s1, a plurality of trenches 2 formed halfway in the n-type drift region n1 along a depth from the principal surface s1, and including a gate trench tr1 and a dummy trench tr2, a gate electrode EG formed in the gate trench tr1 via a gate insulating film IG, and a p-type columnar region pc formed in the n-type drift region n1 at a periphery of a bottom of the dummy trench tr2. The gate trench tr1 and dummy trench tr2 are mutually the same in size and are arranged side by side, and the p-type columnar region pc is formed extending along the depth in the n-type drift region n1. <P>COPYRIGHT: (C)2010,JPO&INPIT |
