| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device allowing a transistor for a digital circuit and a transistor for an analog circuit having characteristics different from each other to be formed by a common process, and a method of manufacturing the same. Ž<P>SOLUTION: In this semiconductor device, a distance L1 from an end on a gate electrode 24a side of a first low-concentration diffusion layer 28N of an N-type high-withstand-voltage transistor 42N for an analog circuit to an end on a gate electrode 24a side of a second low-concentration diffusion layer 30N is set longer than a distance L3 from an end on a gate electrode 24b side of a first low-concentration diffusion layer 48N of a high-withstand-voltage transistor 52N for a digital circuit to an end on a gate electrode 24b of a second low-concentration diffusion layer 50N. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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