| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a group III element nitride crystal, in which reactions between an alkali metal and each of oxygen and water can be prevented and a growth rate of the group III element nitride crystal is improved. SOLUTION: The method for producing the group III element nitride crystal comprises the steps of: putting a group III element, the alkali metal and a seed crystal substrate 20 of the group III element nitride in a crystal growing vessel 18; and pressurizing/heating the inside of the crystal growing vessel 18 in a nitrogen-containing gas atmosphere to grow the group III element nitride crystal while using the seed crystal substrate 20 as a core, further concretely, comprises the steps of: preparing a first hydrocarbon and a second hydrocarbon having the boiling point higher than that of the first hydrocarbon; putting the alkali metal, which is coated with at least the first hydrocarbon of the first and second hydrocarbons, in the crystal growing vessel 18 before the inside of the crystal growing vessel 18 is pressurized/heated; removing the first hydrocarbon used for coating the alkali metal from the crystal growing vessel 18; and pressurizing/heating the inside of the crystal growing vessel 18 in the presence of the second hydrocarbon to grow the group III element nitride crystal. COPYRIGHT: (C)2010,JPO&INPIT
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