| 摘要 |
A semiconductor device includes: an element isolation layer provided in a semiconductor layer; an element region divided by the element isolation layer; a gate interconnect which extends over the element region and the element isolation layer; a sidewall formed at a sidewall of the gate interconnect; and a contact connected to the gate interconnect located over the element isolation layer. The sidewall of the gate interconnect has a region, which is in contact with the contact, in at least an upper portion.
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