| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a resist pattern that suppresses the deterioration focus accuracy caused by immersion exposure. <P>SOLUTION: The method of forming the resist pattern includes steps of: forming a lower layer film 13 where polymer containing fluorine is added on a film to be processed 12; baking the lower layer; forming an interlayer film 14 on the lower film; and forming a resist film 15 on the interlayer film 14. Furthermore, the method includes steps of: baking the resist film; forming a resist protection film 16; carrying out the immersion exposure of the resist film; and then developing the resist film so as to form the resist pattern. <P>COPYRIGHT: (C)2010,JPO&INPIT |
