发明名称 |
SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE EQUIPMENT, DESIGN SYSTEM, MANUFACTURE METHOD AND DESIGN METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a substrate for semiconductor device wherein quality and thickness of a crystal thin film are uniform. SOLUTION: The substrate for semiconductor device includes: a thin film 112 for device for forming a semiconductor device; an inhibiting part 114 which surrounds the thin film for device to inhibit a precursor of the thin film for device from growing to be a crystal; a sacrifice growth part 116 which is formed by sacrifice-growing the precursor to be a crystal and is provided around the thin film for device while being separated from it by the inhibiting part; and a protective film which covers the top of the sacrifice growth part 116 while exposes the top of the thin film for device. The protective film may be a polyimide. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010109358(A) |
申请公布日期 |
2010.05.13 |
申请号 |
JP20090229215 |
申请日期 |
2009.10.01 |
申请人 |
SUMITOMO CHEMICAL CO LTD |
发明人 |
TAKADA TOMOYUKI;HATA MASAHIKO;YAMANAKA SADANORI |
分类号 |
H01L21/20;H01L21/205;H01L21/331;H01L21/8222;H01L27/082;H01L29/737 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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