发明名称 SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE EQUIPMENT, DESIGN SYSTEM, MANUFACTURE METHOD AND DESIGN METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate for semiconductor device wherein quality and thickness of a crystal thin film are uniform. SOLUTION: The substrate for semiconductor device includes: a thin film 112 for device for forming a semiconductor device; an inhibiting part 114 which surrounds the thin film for device to inhibit a precursor of the thin film for device from growing to be a crystal; a sacrifice growth part 116 which is formed by sacrifice-growing the precursor to be a crystal and is provided around the thin film for device while being separated from it by the inhibiting part; and a protective film which covers the top of the sacrifice growth part 116 while exposes the top of the thin film for device. The protective film may be a polyimide. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010109358(A) 申请公布日期 2010.05.13
申请号 JP20090229215 申请日期 2009.10.01
申请人 SUMITOMO CHEMICAL CO LTD 发明人 TAKADA TOMOYUKI;HATA MASAHIKO;YAMANAKA SADANORI
分类号 H01L21/20;H01L21/205;H01L21/331;H01L21/8222;H01L27/082;H01L29/737 主分类号 H01L21/20
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