| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an optical phase control element and a semiconductor light-emitting element, for reducing the power consumption by suppressing recoupling of carriers in a phase control region and an optical gain due to recoupling. <P>SOLUTION: The optical phase control element includes a semiconductor substrate 11 comprising n-type InP, an n-type clad layer 12 formed on the semiconductor substrate 11 and comprising Si-doped n-type InP, an active waveguide layer 13 formed on the n-type clad layer 12 and changing the phase of impinging light, and a p-type clad layer 14 formed on the active waveguide layer 13 and comprising Zn-doped p-type InP. The active waveguide layer 13 has a structure wherein an electron trapping layer 131 comprising GaInAs and a hole trapping layer 132 comprising AlGaInAs are alternately laminated 4 times. <P>COPYRIGHT: (C)2010,JPO&INPIT |
