| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a silicon carbide-based porous body which has high strength, a high heat conductivity and excellent thermal shock resistance although it has high porosity and can be produced by sintering at a relatively low temperature. <P>SOLUTION: The silicon carbide-based porous body contains metal silicide of 1-35 mass% and boron (B) of 0.1-10 mass% expressed in terms of boron oxide (B<SB>2</SB>O<SB>3</SB>), and has porosity of 38-80%. <P>COPYRIGHT: (C)2010,JPO&INPIT |
