| 摘要 |
PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to improve yield of a semiconductor by removing byproduct on a wafer surface by removing an oxide inside a trench. CONSTITUTION: An insulation layer(110) is formed on a bottom metal wiring(101). A trench(120) is formed on the insulation layer to expose a part of the bottom metal wiring. The byproduct is removed inside the sidewall of the trench. A diffusion barrier is formed inside the trench.
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