PURPOSE: An erasing method of a non-volatile memory device is provided to reduce the time of an erasing process by selectively erasing a plurality of memory blocks at the same time. CONSTITUTION: A plurality of memory blocks are erased at the same time using a multi erase voltage(S100). The erase voltage increases using enhancement mode step pulses. One or more failed memory blocks are erased among the memory blocks(S200). The failed information about the memory blocks is provided to a memory control device of the non-volatile memory device.
