发明名称 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
摘要 <p>A semiconductor device which comprises a thin-film transistor and a thin-film diode on a same substrate.  A semiconductor layer (109) of the thin-film transistor and a semiconductor layer (110) of the thin-film diode are crystalline semiconductor layers formed by crystallizing a same crystalline semiconductor film.  The semiconductor layer (110) of the thin-film diode has a larger thickness than the semiconductor layer (109) of the thin-film transistor.  The surface roughness of the semiconductor layer (110) of the thin-film diode is larger than the surface roughness of the semiconductor layer (109) of the thin-film transistor.</p>
申请公布号 WO2010050161(A1) 申请公布日期 2010.05.06
申请号 WO2009JP05575 申请日期 2009.10.22
申请人 SHARP KABUSHIKI KAISHA;YAMANAKA, MASAKI;NAKATSUJI, HIROSHI;MAKITA, NAOKI 发明人 YAMANAKA, MASAKI;NAKATSUJI, HIROSHI;MAKITA, NAOKI
分类号 H01L27/14;G02F1/1368;G09F9/33;H01L21/336;H01L29/786;H01L31/10 主分类号 H01L27/14
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