发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE |
摘要 |
<p>A semiconductor device which comprises a thin-film transistor and a thin-film diode on a same substrate. A semiconductor layer (109) of the thin-film transistor and a semiconductor layer (110) of the thin-film diode are crystalline semiconductor layers formed by crystallizing a same crystalline semiconductor film. The semiconductor layer (110) of the thin-film diode has a larger thickness than the semiconductor layer (109) of the thin-film transistor. The surface roughness of the semiconductor layer (110) of the thin-film diode is larger than the surface roughness of the semiconductor layer (109) of the thin-film transistor.</p> |
申请公布号 |
WO2010050161(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
WO2009JP05575 |
申请日期 |
2009.10.22 |
申请人 |
SHARP KABUSHIKI KAISHA;YAMANAKA, MASAKI;NAKATSUJI, HIROSHI;MAKITA, NAOKI |
发明人 |
YAMANAKA, MASAKI;NAKATSUJI, HIROSHI;MAKITA, NAOKI |
分类号 |
H01L27/14;G02F1/1368;G09F9/33;H01L21/336;H01L29/786;H01L31/10 |
主分类号 |
H01L27/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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