发明名称 |
STRUCTURE AND SEMICONDUCTOR OPTICAL APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a germanium structure increasing a reduction effect of direct energy gap E<SB>0</SB>by tensile strain. <P>SOLUTION: The germanium structure has a germanium particle and a buried layer covering over the germanium particle for embedding the germanium particle, and the buried layer generates the tensile strain in the germanium particle in each direction of three crystal axes of the germanium particle. <P>COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2010103430(A) |
申请公布日期 |
2010.05.06 |
申请号 |
JP20080275806 |
申请日期 |
2008.10.27 |
申请人 |
FUJITSU LTD;UNIV OF TOKYO |
发明人 |
KAWAGUCHI KENICHI;EBE KOJI;ARAKAWA YASUHIKO |
分类号 |
H01L31/10;G01J1/02;H01L33/00 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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