发明名称 STRUCTURE AND SEMICONDUCTOR OPTICAL APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a germanium structure increasing a reduction effect of direct energy gap E<SB>0</SB>by tensile strain. <P>SOLUTION: The germanium structure has a germanium particle and a buried layer covering over the germanium particle for embedding the germanium particle, and the buried layer generates the tensile strain in the germanium particle in each direction of three crystal axes of the germanium particle. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010103430(A) 申请公布日期 2010.05.06
申请号 JP20080275806 申请日期 2008.10.27
申请人 FUJITSU LTD;UNIV OF TOKYO 发明人 KAWAGUCHI KENICHI;EBE KOJI;ARAKAWA YASUHIKO
分类号 H01L31/10;G01J1/02;H01L33/00 主分类号 H01L31/10
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