| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor device that prevents a P-type electrode from being peeled off. Ž<P>SOLUTION: The nitride semiconductor device 100 includes: a P-type nitride semiconductor layer 1; a ridge 2 formed on the P-type semiconductor layer 1; an insulation film 3 that is formed on the side surface of the ridge 2 and on the upper surface of the P-type nitride semiconductor layer 1 and is made of an oxide-based material; and a P-type electrode 4 that is formed on the upper surface of the ridge 2 and on the upper surface of the insulation film 3 and contains such a material that is easy to be oxidized, at least in its lower layer. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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