| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the adhesion of a through electrode and a pad electrode, without causing a short circuit failure in the through electrode. <P>SOLUTION: A semiconductor is configured so that an etch stopper film 23 may be laminated on a pad electrode 21b where an opening 22 is formed, and that the leading end of the through electrode 45 may penetrate through part of the pad electrode 21b via the opening 22 and may be stopped by the etch stopper film 23, when the through electrode 45 is embedded in a through-hole 41 formed in a semiconductor substrate 11. <P>COPYRIGHT: (C)2010,JPO&INPIT |
