| 摘要 |
PROBLEM TO BE SOLVED: To produce a desired SiN film by low-temperature processing. SOLUTION: A method for manufacturing a semiconductor device includes: a means for supplying a nitride-based gas (nitride (N<SB>2</SB>) gas, ammonium (NH<SB>3</SB>) gas, diazine (N<SB>2</SB>H<SB>2</SB>) gas or hydrazine (N<SB>2</SB>H<SB>4</SB>) gas etc.) to an object to be treated; a means for supplying a silicon-based gas (gas containing amino group, dimethylamino group or ethyl amino group, silane gas, disilane gas or disilazane gas etc.) to the object; and a means for bringing the object into a depressurized environment in supplying each of the gasses. COPYRIGHT: (C)2010,JPO&INPIT |
