发明名称 |
METHOD OF FORMING ULTRA-SHALLOW JUNCTIONS FOR SEMICONDUCTOR DEVICES |
摘要 |
A first method for producing a doped region in a semiconductor substrate includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region. A second method for producing a semiconductor device having a shallow junction region includes providing a first gas and a second gas in a container. The first gas includes a first dopant and the second gas includes a second dopant. The second method also includes implanting the first and second dopants into a semiconductor substrate using an ion. The ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant.
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申请公布号 |
US2010112795(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090570995 |
申请日期 |
2009.09.30 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
KAIM ROBERT;ARNO JOSE I.;DIETZ JAMES A. |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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