发明名称 CHARGED PARTICLE BEAM APPARATUS AND FOCUSED ION BEAM APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged particle beam apparatus and a focused ion beam apparatus, capable of lowering a charged particle accelerating voltage, while suppressing a decrease in precision and efficiency of processing due to charged particle beams. Ž<P>SOLUTION: When a voltage applied between an LMIS 1 and an extraction electrode 13 is set to 5 to 8 (kV) and an applied voltage to a condenser lens 2 is set to 0 (kV), a distance between the upstream-side surface of the extraction electrode 13 and the beam limiting aperture 14 is determined so that a condition of an applied voltage Va to an acceleration electrode 15 and an applied voltage Vobj to an objective lens 8 in focusing charged particles on a sample 10 through an objective lens 8 is Vobj≈A×Va when Va≥2 (kV) and is Vobj>A×Va+10 (V) when Va=1 (kV). Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010102938(A) 申请公布日期 2010.05.06
申请号 JP20080273127 申请日期 2008.10.23
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 KAGA HIROYASU;SASAKI MASAJI;AZUMA JUNZO
分类号 H01J37/317 主分类号 H01J37/317
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