发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A nonvolatile semiconductor memory device capable of reading and verifying a negative threshold cell by biasing a source line and a well line to a positive voltage. The nonvolatile semiconductor memory device includes a precharge circuit which precharges a bit line to the same voltage as that of the source line in reading and verifying the negative threshold cell.
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申请公布号 |
US2010110799(A1) |
申请公布日期 |
2010.05.06 |
申请号 |
US20090650981 |
申请日期 |
2009.12.31 |
申请人 |
HAMADA MAKOTO;MAEJIMA HIROSHI |
发明人 |
HAMADA MAKOTO;MAEJIMA HIROSHI |
分类号 |
G11C16/06;G11C16/04 |
主分类号 |
G11C16/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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