| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique which compensates for the variations in the characteristics of memory cells. <P>SOLUTION: A three-dimensional stacked nonvolatile semiconductor memory is provided with: a memory cell array which is composed of the plurality of memory cells, connected to word lines WL<0> to WL<3> that are mutually insulated and laminated on a semiconductor board; a register circuit 33, which holds configuration information on operation to the memory cell array; and a potential control circuit 35, which controls potentials to be supplied to the word lines. The register circuit 33 holds the information on potentials suitable to the respective word lines WL<0> to WL<3>. On the basis of this information and an address signal Add, the potential control circuit 35 generates potentials which are suitable to the respective word lines and supplies the generated potentials to the word lines. <P>COPYRIGHT: (C)2010,JPO&INPIT |
