| 摘要 |
<p>An ion implanting apparatus (18a-18d) is provided with a first ion irradiation apparatus (50a) arranged on the side of a carry-in port (60) of a vacuum chamber (51), and a second ion irradiation apparatus (50b) which is arranged on the side of a carry-out port (61) of the vacuum chamber (51) by being spaced apart from the first ion irradiation apparatus (50a), and the ion irradiation regions of the first and second ion irradiation apparatuses do not overlap each other. Thus, since a first surface (30a) and a second surface (30b) of a subject to be processed (30) are prevented from being irradiated with ions at the same time, the temperature inside the subject to be processed can be prevented from increasing rapidly.</p> |
