Method for manufacturing electronic device and method for manufacturing piezoelectric device

摘要

An ion implantation layer (100) is formed at a certain depth from one principal face of a piezoelectric single crystal substrate (1) by implanting hydrogen ions into the piezoelectric single crystal substrate (1) under certain conditions. The piezoelectric single crystal substrate (1) in which the ion implantation layer (100) has been formed is bonded to a supporting substrate (30B), and a piezoelectric thin film (10) is then formed through the application of heat using the ion implantation layer (100) as a detaching interface. This heated detachment is performed at a reduced pressure at a heating temperature determined in accordance with the reduced pressure. The piezoelectric thin film (10) is formed at a low temperature at such a reduced pressure compared with at atmospheric pressure.