发明名称 Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate
摘要 The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
申请公布号 US7710538(B2) 申请公布日期 2010.05.04
申请号 US20080257544 申请日期 2008.10.24
申请人 ASML NETHERLANDS B.V. 发明人 MENCHTCHIKOV BORIS;DE JONG FREDERIK EDUARD
分类号 G03B27/68;G03B27/42;G03B27/54;G03C5/00 主分类号 G03B27/68
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