发明名称 |
Method and arrangement for correcting thermally-induced field deformations of a lithographically exposed substrate |
摘要 |
The invention provides a method for correcting thermally-induced field deformations of a lithographically exposed substrate. First, a model is provided to predict thermally-induced field deformation information of a plurality of fields of the substrate. The pre-specified exposure information used to configure an exposure of the fields is then modified based on the thermally-induced deformation information as predicted by the model. Finally a pattern is exposed onto the fields in accordance with the pre-specified exposure information as modified. The predicting of thermally-induced field deformation information by the model includes predicting of deformation effects of selected points on the substrate. It is based on a time-decaying characteristic as energy is transported across substrate; and a distance between the selected points and an edge of the substrate.
|
申请公布号 |
US7710538(B2) |
申请公布日期 |
2010.05.04 |
申请号 |
US20080257544 |
申请日期 |
2008.10.24 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
MENCHTCHIKOV BORIS;DE JONG FREDERIK EDUARD |
分类号 |
G03B27/68;G03B27/42;G03B27/54;G03C5/00 |
主分类号 |
G03B27/68 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|