发明名称 Methods for testing semiconductor devices, methods for protecting the same from electrostatic discharge events during testing, and methods for fabricating inserts for use in testing semiconductor devices
摘要 An apparatus and method for providing external electrostatic discharge (ESD) protection to a semiconductor device, which may or may not include its own ESD protection, are provided. An ESD structure may be associated with each interconnect, either individually or shared between two or more interconnects. Each interconnect includes a contact tip for establishing a temporary electrical connection with a bond pad of the semiconductor device and a contact pad for electrically interfacing the bond pad with external burn-in and/or test equipment. The ESD structure may be implemented, for example, as a fusible element or a shunting element, such as a pair of diodes, a diode-resistor network, or a pair of transistors. The interconnect may be employed as part of an insert including a plurality of interconnects that provides ESD protection to a plurality of integrated circuits of at least one semiconductor device.
申请公布号 US7709279(B2) 申请公布日期 2010.05.04
申请号 US20040827806 申请日期 2004.04.20
申请人 MICRON TECHNOLOGY, INC. 发明人 HEMBREE DAVID R.;AKRAM SALMAN
分类号 H01L21/66;G01R1/18;H01L23/525;H01L23/544;H01L23/58;H01L27/02;H01L29/74;H01L31/111 主分类号 H01L21/66
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