SOLID STATE IMAGE SENSING DEVICE AND METHOD FOR MAKING SAME

摘要

PURPOSE: A solid imaging device, a solid state imaging apparatus, and a manufacturing method thereof are provided to offer a photo diode with large area ratio per one pixel area by reducing an area occupied by a read channel. CONSTITUTION: A p-type well region(114) is formed on an n-type substrate(115). A silicon hole is formed on the p-type well region. A p+ type region(104) is formed on the bottom of the silicon hole. A p+ type isolation region is formed on the part of the side wall of the silicon hole in order to contact the p+ type region. A n-type photoelectric transformation region(110) is formed on the lower part of the P+ type region and on the other part of the side wall of the silicon hole. A read channel(112) is formed on an area interposed between the n-type photoelectric transformation region and a n-type CCD(Charge Coupled Device) channel region(103).