发明名称 |
PAA-based etchant, methods of using same, and resultant structures |
摘要 |
A wet-etch composition may include: peracetic acid (PAA); and a fluorinated acid; a relative amount of the PAA in the composition being sufficient to ensure an etch rate of (P-doped-SiGe):(P-doped-Si) that is substantially the same as an etch rate of (N-doped-SiGe):(N-doped-Si). Such a wet-etch composition is hereafter referred to as a PAA-based etchant and can be used to make, e.g., a CMOS MBCFET, an electrode of a capacitor, etc.
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申请公布号 |
US7709277(B2) |
申请公布日期 |
2010.05.04 |
申请号 |
US20060600224 |
申请日期 |
2006.11.16 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HYO-SAN;KO HUNG-HO;HONG CHANG-KI;CHOI SANG-JUN |
分类号 |
H01L21/00;H01L21/308;C09K13/08;C23F1/24;G11C8/02;H01L21/302;H01L21/306;H01L21/3213;H01L21/336;H01L21/461;H01L21/8238;H01L21/8242;H01L27/108;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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