发明名称 |
Two stage voltage boost circuit with precharge circuit preventing leakage, IC and design structure |
摘要 |
A two stage voltage boost circuit, IC and design structure are disclosed for boosting a supply voltage using gate control circuitry to reduce gate oxide stress, thus allowing lower voltage level FETs to be used. The voltage boost circuit may include a first stage for boosting the supply voltage to a first boosted voltage and a second stage for boosting the first boosted voltage to a second boosted voltage. Each stage may include a passgate and a gate control circuit for generating an on-state gate voltage level for the respective passgate adjusted to reduce gate oxide voltage stress on the passgate. The circuit may also include a precharge circuit for coupling a voltage on a high node of the second stage to a gate node of a precharge transistor thereof for disabling the precharge transistor and preventing leakage back to a power supply voltage.
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申请公布号 |
US7710195(B2) |
申请公布日期 |
2010.05.04 |
申请号 |
US20080031731 |
申请日期 |
2008.02.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DREIBELBIS JEFFREY H.;FIFIELD JOHN A. |
分类号 |
H02M3/18;G05F1/46 |
主分类号 |
H02M3/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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