METHOD OF FORMING PATTERNS OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A pattern formation method of a semiconductor device is provided to form a plurality of trenches with different widths in an array region and a peripheral circuit region by applying a double patterning process which uses a spacer formed in both side walls of a mold pattern as the etch mask. CONSTITUTION: A low density mask pattern is formed in a second region on a substrate(300) including a first region(A) and a second region(B). A plurality of narrow mold mask patterns(330A) are formed in the first region. A plurality of first spacers(340A) covering the sidewall of a plurality of narrow mold mask patterns are formed in the first region. A plurality of narrow mold mask patterns in which a plurality of first spacers is transcribed is formed. In the second region, a wide mold mask pattern(330B) in which the low density mask pattern is transcribed is formed.