BIO SENSOR USING PARASITIC FRINGING GATE FIELD EFFECTS OF FIELD EFFECTIVE TRANSISTOR AND MANUFACTURING METHOD THEROF

摘要

PURPOSE: A biosensor using parasitic fringing gate of a field effect transistor and a method for manufacturing the same are provided to easily and cheaply manufacture the biosensor having improved sensitivity. CONSTITUTION: A biosensor using a parasitic fringing gate field effect of filed effect transistor comprises: a substrate; a source(330) and drain(340) which are separately formed between the substrate and channel area an insulating layer formed at upper portion of the channel area; the gate which is formed at the insulating layer and covers a part of insulating layer; and a biomolecule which is bound by a linker. The gate is metal or polysilicon, self-aligned monolayer(SAM). The insulating layer contains silicon oxide, metal oxide, or high-K material. A method for manufacturing the biosensor comprises: a step of forming the insulating layer on the substrate; a step of forming the gate layer on the insulating layer; a step of etching a part of gate layer; and a step of binding a biomolecule on the exposed upper surface of the insulating layer.