| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device by which a gettering sink can easily be formed in a short period of time without any risk of causing the contamination of heavy metal when forming the gettering sink. Ž<P>SOLUTION: A semiconductor substrate is set to a laser irradiation apparatus, and is irradiated with a laser beams while moving the semiconductor substrate. At the time, the laser beams are condensed such that a condensing point (focus) is at a position about several tens μm deep from one surface of the semiconductor substrate by a condensing lens (condensing means). Thus, the crystal structure of the semiconductor substrate is modified and the gettering sink is formed. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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