| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching device capable of satisfactorily processing a substrate into an arbitrary shape, an etching method, an etching program, and a film forming device. SOLUTION: An etching device 30 is provided with an ion gun 11, an XY stage 12, a control unit 13, and a PC 15. An etching amount of each of regions divided like a grid of a substrate 31 to be etched is calculated in accordance with a distribution of the thickness of the substrate 31 which is preliminarily measured, and the PC 15 determines an etching time in each region so that the region is etched up to the etching amount. In the case of the existence of a region of which the etching time is negative, this region is covered with a shutter 40 to prevent the excessive etching of the region of which the etching time is negative. Thus the substrate 31 is processed into an arbitrary shape. COPYRIGHT: (C)2010,JPO&INPIT |
