METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve yield by increasing planarization of an insulation layer by performing a first CMP process and a second CMP process using slurry with a low selection ratio. CONSTITUTION: An insulation layer(150b,150c) for insulating gates is polished with a CMP(Chemical Mechanical Polishing) process. When the insulation layer is polished with the CMP process, slurry and phosphoric acid based chemical solutions are used. The thickness of the insulation layer is partially removed using the slurry through a first CMP process. The insulation layer processed with the first CMP process is planarized through a second CMP process using the slurry and phosphoric acid based chemical solutions.