| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film PIN diode element capable of preventing a decrease in optical current even when having a region of low impurity concentration or when charges are generated in a gate insulation film or on the surface of a gate electrode. Ž<P>SOLUTION: The thin-film PIN diode element includes: a semiconductor island 1 having a p-region P containing p-type impurity (e.g. boron) implanted thereinto, an n-region N containing n-type impurity (e.g. phosphorus) implanted thereinto and an i-region I sandwiched by each of the regions; an anode electrode 2 connected to the p-region P; a cathode electrode 3 connected to the n-region N; a gate electrode 5 disposed on a boundary between the p-region P and the i-region I via the gate insulating film 11; a gate electrode 6 disposed on a boundary between the n-region N and the i-region I via the gate insulating film 11; and a gate electrode 7 disposed on each of the gate electrodes 5, 6 via an interlayer film 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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