| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of applying a chamfering work to the corner of the edge of a workpiece with a sufficient work amount while preventing cracks even when using a large-sized and thin work like a wafer. <P>SOLUTION: The plasma treatment apparatus 1 includes: a support 4 for supporting a planar workpiece 10; a first electrode 21 and a second electrode 22 oppositely disposed near the edge 102 of the workpiece 10 supported by the support 4 so that the mutual separation distance is gradually reduced from the center side of the workpiece 10 to the side of the edge 102; a treatment gas supply means 6 for supplying a treatment gas between the first electrode 21 and the second electrode 22; and an energizing means 7 for carrying electricity between the first electrode 21 and the second electrode 22. <P>COPYRIGHT: (C)2010,JPO&INPIT |
