| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To inexpensively form a stable plating layer on the front surface of a substrate, while preventing a plating liquid from being contaminated and preventing nonuniform plating from being deposited on the rear surface of the substrate when performing the plating processing on the front surface of the substrate, and also to prevent the warpage of the substrate when forming a protective film on the rear surface of the substrate. <P>SOLUTION: The semiconductor device includes electrodes on the front and rear surfaces of the substrate 1. In the device, an insulating film 13 is formed by a plasma CVD method on the front surface of a collector electrode 9 on the rear surface of the substrate 1. Then, the plating processing is performed on an emitter electrode 6 on the front surface of the substrate 1, so as to form a nickel plating layer 11 and a gold plating layer 12 on the front surface of the emitter electrode 6. Then, the insulating film 13 formed on the front surface of the collector electrode 9 is removed. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
