| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique for reducing a channel resistance in a semiconductor device comprising a field-effect transistor. <P>SOLUTION: A semiconductor device comprises a trench gate type field-effect transistor on a semiconductor substrate 1 having a first main surface S1 and a second main surface S2 oppositely positioned in a thickness direction, wherein the trench gate type field-effect transistor comprises a first semiconductor region 2 formed on the first main surface S1 side, a second semiconductor region 5 formed on the second main surface S2 side; a semiconductor well region 3 formed between the first semiconductor region and the second semiconductor region, a trench 9 formed so as to extend in a first direction A intersecting the second main surface, and a gate electrode 8 formed on an inner surface of the trench via a gate insulating film 6. Also, the bottom BG of the gate electrode 8 is in the first semiconductor region 2, a well bottom BW has well depths DBW and well shallows SBW, and the well depths DBW are in a region more distant from the gate insulating film 6 compared to the well shallows SBW. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
