| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a structure suitable for a protective circuit for taking advantage of characteristics of a display device using an oxide semiconductor excellent in operating characteristics and producible at low temperature. <P>SOLUTION: The protective circuit includes: a non-linear element 170a having a gate insulating layer 102 covering a gate electrode 101, a first oxide semiconductor layer 103 overlapping with the gate electrode 101 over the gate insulating layer 102, and a pair of a first wiring layer 38 and a second wiring layer 39 whose end portions overlap with the gate electrode over the first oxide semiconductor layer 103 and in which a conductive layer 105a and a second oxide semiconductor layer 104a are stacked. Over the gate insulating layer 102, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be reduced and the characteristics of the non-linear element 170a can be improved. <P>COPYRIGHT: (C)2010,JPO&INPIT |
