NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A nitride semiconductor light emitting device and a method of manufacturing the same are provided to maximize light extraction efficiency of light emitted from inside a device by forming a pattern on the side of a substrate. CONSTITUTION: A substrate comprises a pattern on the side. An n-type nitride semiconductor layer(120) is formed on the substrate(100). An active layer(130) is formed on a part of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer(140) is formed on the active layer. A P-contact(150) is formed on the p-type nitride semiconductor layer. The N type electrode(160) is formed on the n-type nitride semiconductor layer.