| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly integrated and high-power compound semiconductor field effect transistor. Ž<P>SOLUTION: The compound semiconductor field effect transistor includes: a semiconductor part 43 in a rectangular column shape or a truncated pyramid shape, where a current flows in an axial direction in an ON state; and a peripheral part where a first insulating layer 50, a control electrode layer 60 and a second insulating layer 72 are laminated in order along the axial direction of the semiconductor part, around the semiconductor part. The semiconductor part includes an electron traveling part 44 in the rectangular column shape or the truncated pyramid shape and an electron supply part 46 formed on the side face 44c of the electron traveling part. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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