| 摘要 |
<P>PROBLEM TO BE SOLVED: To stably perform read operation by reducing power consumption and reducing voltage of the power supply voltage in a semiconductor device which has a storage circuit. Ž<P>SOLUTION: The semiconductor device includes: a memory cell 2; a precharge circuit 8; negative potential applying circuits 3 and 4; and a sense amplifier 6. The memory cell 2 is connected to a first bit line BT and store data. The precharge circuit 8 is connected to the first and second bit lines BT and BN and precharges the first and second bit lines BT and BN to a ground potential. The negative potential applying circuits 3 and 4 are connected to the first bit line BT and applies a negative potential to the first bit line BT. The sense amplifier 6 is connected to the first and second bit lines BT and BN and read data based on a difference between a first potential of the first bit line BT and a second potential of the second bit line BN. An absolute value of the negative potential is smaller than the difference between the first potential and the second potential. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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