| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon wafer for epitaxial substrate, which suppresses generation of automatic doping and misfit dislocation in epitaxial growth. SOLUTION: The method for producing the silicon wafer for epitaxial substrate includes: a first step S101 of performing thermal oxidization on the silicon wafer 101 containing boron atoms no less than 1E19 atoms/cm3, thereby forming a silicon oxide film 102 on the surface of the silicon wafer 101; a second step S102 of peeling off the silicon oxide film 102; and a third step S103 of performing heat treatment on the silicon wafer 101 in a hydrogen atmosphere. Thus, impurity concentration of a surface layer is remarkably reduced while holding the impurity concentration inside the silicon wafer 101 as high concentration. Consequently, the silicon wafer for substrate which is excellent in impurity concentration profiles and capable of growing an epitaxial growth film with less misfit dislocation is manufactured. COPYRIGHT: (C)2010,JPO&INPIT |
