发明名称 Semiconductor memory device having sense amplifier
摘要 To provide a first power supply wiring that supplies a lower-side write potential to a sense amplifier, a second power supply wiring that supplies a higher-side write potential to the sense amplifier, a third power supply wiring that supplies an overdrive potential to the sense amplifier, and a stabilizing capacitance arranged between the first power supply wiring and the third power supply wiring. With this configuration, a capacitance value applied to the lower-side write potential and a capacitance value applied to the overdrive potential inevitably match, and thus fluctuation of the lower-side write potential and fluctuation of the overdrive potential at an initial stage of a sense operation are offset.
申请公布号 US2010103758(A1) 申请公布日期 2010.04.29
申请号 US20090588730 申请日期 2009.10.26
申请人 ELPIDA MEMORY, INC. 发明人 RIHO YOSHIRO;KUBOUCHI SHUICHI
分类号 G11C7/02;G11C5/14 主分类号 G11C7/02
代理机构 代理人
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