SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD

摘要

Disclosed is a semiconductor light-emitting element (11) equipped with: a substrate (1); a stacked semiconductor layer (15) comprised of an n-type semiconductor layer (3) formed on the substrate (1), a light-emitting layer (4) stacked on the n-type semiconductor layer (3), and a p-type semiconductor layer (5) stacked on the light-emitting layer (4); a concavo-convex part (33) formed on all or a portion of the top face (15a) of the stacked semiconductor layer (15) for the purpose of improving light extraction efficiency; a high-concentration p-type semiconductor layer (8) that is stacked on convex parts (33a) which form the concavo-convex part (33) of the stacked semiconductor layer (15) and that has a higher dopant concentration than that of the p-type semiconductor layer (5); and a translucent current diffusion layer (20) stacked at least on the high-concentration p-type semiconductor layer (8).