发明名称 |
INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS OF MANUFACTURING THEM |
摘要 |
An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.
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申请公布号 |
US2010101834(A1) |
申请公布日期 |
2010.04.29 |
申请号 |
US20080528667 |
申请日期 |
2008.02.22 |
申请人 |
NATIONAL UNIVERSITY CORP. TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;ZEON CORPORATION |
发明人 |
OHMI TADAHIRO;YASUDA SEIJI;INOKUCHI ATSUTOSHI;MATSUOKA TAKAAKI;KAWAMURA KOHEI;NAKAMURA MASAHIRO |
分类号 |
H01B3/22;B32B37/00;H01B3/24 |
主分类号 |
H01B3/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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