发明名称 INTERLAYER INSULATION FILM, INTERCONNECT STRUCTURE, AND METHODS OF MANUFACTURING THEM
摘要 An interlayer insulation film can be produced by laminating a hydrocarbon layer containing an Si atom and a fluorocarbon layer containing an N atom on each other, wherein the hydrocarbon layer contains an H atom and a C atom at such a ratio that the ratio of the number of C atoms to the number of H atoms (H/C) becomes 0.8 to 1.2. The interlayer insulation film makes it possible to suppress generation of a leak current and the film shrinkage which may be caused by thermal annealing and has a low dielectric constant and is stable.
申请公布号 US2010101834(A1) 申请公布日期 2010.04.29
申请号 US20080528667 申请日期 2008.02.22
申请人 NATIONAL UNIVERSITY CORP. TOHOKU UNIVERSITY;TOKYO ELECTRON LIMITED;ZEON CORPORATION 发明人 OHMI TADAHIRO;YASUDA SEIJI;INOKUCHI ATSUTOSHI;MATSUOKA TAKAAKI;KAWAMURA KOHEI;NAKAMURA MASAHIRO
分类号 H01B3/22;B32B37/00;H01B3/24 主分类号 H01B3/22
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