SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor device according to one embodiment includes: a semiconductor element formed on a semiconductor substrate; a metal wiring formed above the semiconductor element; an amorphous silicon film formed above the semiconductor element, the amorphous silicon film being insulated from the metal wiring; and a metal diffusion blocking film formed above the amorphous silicon film, the metal diffusion blocking film having a property to suppress diffusion of metal atoms in the metal wiring.