发明名称 AN ION SOURCE AND A METHOD FOR IN-SITU CLEANING THEREOF
摘要 An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source, in one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more wails of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.
申请公布号 WO2010017114(A3) 申请公布日期 2010.04.29
申请号 WO2009US52530 申请日期 2009.08.03
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES;KOO, BON-WOONG;CAMPBELL, CHRIS;CHANEY, CRAIG, R.;LINDBERG, ROBERT;PEREL, ALEXANDER, S.;PLATOW, WILHELM, P. 发明人 KOO, BON-WOONG;CAMPBELL, CHRIS;CHANEY, CRAIG, R.;LINDBERG, ROBERT;PEREL, ALEXANDER, S.;PLATOW, WILHELM, P.
分类号 H01L21/265 主分类号 H01L21/265
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